This paper proposes an estimate of the stirring intensity needed to maintain an efficient segregation of impurities towards the liquid when crystallizing semiconductors such as silicon,with rapid solidification rates(several cm/h).The method,valid far from stagnation points or detachments,is based on the properties of turbulent boundary layers,with a normal velocity of the liquid towards the solid/liquid interface due to solidification,that has the same effect as boundary layer suction in aeronautics.The transition between the diffusive regime(no segregation),and the convective regime(efficient segregation)occurs if the friction at the wall is greater than a threshold depending on the solidification rate.A chart is given to estimate the convecto-diffusive parameter from the ratio between stirring and solidification velocity,and the Reynolds number.
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