全息光刻制备LC-DFB及光栅刻蚀优化

摘要

成功制备出室温激射波长为2 μm的GaSb基侧向耦合分布反馈量子阱激光器.采用全息曝光及电感耦合等离子体刻蚀技术制备二阶布拉格光栅.优化了光栅制备的刻蚀条件,并获得室温2 μm单纵模激射.激光器输出光功率超过5 mW,最大边模抑制比达到24 dB.%GaSb-based laterally coupled distributed feedback(LC-DFB)quantum well lasers with a wavelength of 2 μm were successfully prepared.Second order Bragg gratings are fabricated by holographic lithography and induc-tively coupled plasma etching(ICP).The etching conditions for grating preparation are optimized and a single lon-gitudinal mode lasing at room temperature is obtained.The room temperature peak power output per facet exceeds 5 mW with a maximum side-mode suppression ratio of more than 24 dB.