利用量子力学中的密度矩阵算符理论和迭代方法,得到Morse势阱中的光整流系数和电光效应的解析表达式.并以典型的GaAs/AlGaAs莫尔斯量子阱为例进行了数值计算.研究结果表明,较大的光整流系数和电光效应与系统的非对称性有关,系统的非对称性越大,光整流系数和电光效应越大.%Analytical expressions of optical rectification and electro-optic effects in Morse quantum well are obtained by density matrix approach and iterative method. Numerical results are illustrated for a typical GaAs/AlGaAs Morse quantum well. It is found that the optical rectification coefficient and electro-optic effects increase with the enhancement of the asymmetry of Morse quantum well.
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