基于金属催化化学腐蚀的硅纳米线可控制备

摘要

硅纳米线由于其独特的光电特性，被认为是最具前景的光电材料之一。本文关注于使用金属催化化学腐蚀法制备硅纳米线当中各种可控参数的影响，成功地完成了硅纳米线制备。研究发现，高电镀液浓度与长电镀时间都会形成小密度的硅纳米线阵列；而腐蚀液浓度控制着腐蚀速率与硅纳米线的形貌。腐蚀时间对硅纳米线长度和密度都具有一定的影响；而使用氮气干燥能够改善硅纳米线的聚集情况。%Silicon nanowire is regarded as one of the most promising optoelectronic materials because of its unique optoelectronic characteristics.This article focused on the influence of various controllable parameters in the preparation of silicon nanowires using metal-assisted chemical etching and the silicon nanowires were pre-pared successfully.According to the study,high concentration of plating solution and long plating time would form silicon nanowires in low density;the etching rate and morphosis of silicon nanowires were controlled by the concentration of etching solution.The etching time had an influence not only on the length of silicon nanowires,but also on the density,while drying with nitrogen could optimize the aggregation of silicon nanowires.