缺陷调控对氧化锌纳米棒阵列光电响应与恢复性能的影响

摘要

通过在空气和氮气中不同温度的退火处理对氧化锌内部缺陷进行调控,并研究了缺陷调控对氧化锌光电响应和恢复性能的影响.在空气气氛中,随着退火温度的升高,氧空位和锌空位的浓度逐渐增加.在氮气中高温退火后,氧空位浓度增加,锌空位却被湮灭.退火后的氧化锌纳米棒阵列比未退火的氧化锌纳米棒阵列表现出更显著的光电恢复效率(最高提高约40倍),然而,退火后的氧化锌纳米棒阵列对紫外光的光电响应速率却被减弱.%In this paper, the intrinsic defects in ZnO nanorod array films are adjusted through the annealing treatment.The annealing treatments are conducted both in air and nitrogen at different temperatures.When annealed in oxygen, the concentration of oxygen vacancy and zinc vacancy increased with the increasing annealing temperature.When annealed in nitrogen at high temperatures, the concentration of oxygen vacancy increased while the zinc vacancy was vanished due to the low oxygen pressure.The annealed ZnO nanorod arrays behaved more remarkable photoelectric recovery efficiency (improved 40 times maximumly).Nevertheless, the changes of oxygen vacancy concentration brought the decrease of concentration of photogenerated carriers.Thus, the annealed ZnO nanorod arrays behaved degenerate response rate than ZnO nanorod array without annealing treatment.