提出了一种高效率的电荷泵电路结构,在相同输入电压条件下,其输出电压比传统电荷泵高出1个阈值电压.此外,针对传统电荷泵电路在上电过程中存在浪涌电流的缺点,设计了一个两级限流电路,实现电荷泵电路的软启动,确保芯片在热拔插过程中,不会影响输入电源线上的其他芯片的正常工作.芯片测试结果表明在电源电压为2.7 V、负载电容为4.5μF、负载电阻为600Ω的条件下,提供4.8 V的输出电压,上升时间约为36 ms,实现可靠性工作,效率最高达到83％.%A high-efficiency charge pump which supported hot-swapping was proposed basing on 130 nm CMOS process. High effi-ciency was achieved by higher level of threshold voltage than traditional charge pump. Meanwhile, a two-stage current-limiting circuit was incoporated to ensure soft start and avoid inrush current which was common in traditional circuit. Results showed that the pro-posed charge pump was capable of supplying 4.8 V output voltage under 2.7 V input supply voltage, with rise time being about 36 ms under 4.5 μF load capacitance and 600 Ω load resistor.
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