用阳极氧化法在Ti基片上制备出TiO2薄膜，然后通过电化学沉积法将Co-Pi和Cu2O沉积在TiO2薄膜表面。通过扫描电镜、X-射线衍射和光电化学性质测试，发现TiO2薄膜表面先沉积Co-Pi能够有效阻止Cu2O颗粒堆积，光电流显著提高。而先沉积Cu2O后沉积Co-Pi，则会使Cu2O还原为Cu，同时形貌发生改变。特别地，沉积300秒Co-Pi后再沉积Cu2O颗粒，能得到200 mA/cm2的最大光电流。%TiO2 film is prepared on Ti substrates by anodic oxidation method. Then Co-Pi and Cu2O particles are fabricated on TiO2 flat surface using a facial electrochemical deposition method. Scanning electron microsco-py, X-ray diffraction and photoelectrochemical properties reflect that depositing Co-Pi particles in advance on the surface of TiO2 thin films can prevent Cu2O forming stacked particle structure, increase the photocurrent sig-nificantly, and deposit Co-Pi after Cu2O makes Cu2O reduction to Cu and that at the same time the morphology changes a lot. Specifically, when the deposition time of Co-Pi is set to be 300 s, the structure of TiO2/Co-Pi/Cu2O can get the maximum photocurrent of 200 A cm-2 .
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