以多晶硅线切割废料为主要原料制备碳化硅陶瓷的研究

摘要

Silicon carbide ceramic was prepared via 1420℃ vacuum sintering technology by using polysilicon line cutting waste as main material, doped with a proper amount of SiC powder. The purpose of the present work was to study the effects of the amount of SiC powder on the bulk density, porosity and bending strength of SiC ceramic products. The results show that the apparent porosity increases gradually, the bulk density and bending strength increase at first and then decrease when more SiC powder is added to the material. The SiC ceramic product has the highest bulk density (2.25g/cm3) and the highest bending strength (99.8MPa) when 10 wt.% of SiC powder is added.%以多晶硅线切割废料为主要原料、添加适量碳化硅粉,经1420℃真空烧制获得了碳化硅陶瓷材料.研究了碳化硅粉加入量对碳化硅陶瓷制品体积密度、气孔率和抗折强度等性能的影响.研究结果表明:随碳化硅粉添加量的增加,材料的气孔率逐渐增大、体积密度和抗折强度则呈现先增大后变小的趋势；当碳化硅粉的加入量为10wt％时,试样的体积密度达到最大值2.25g/cm3,抗折强度达到最大值99.8 MPa.