采用埋沟、三层多晶硅、两次金属工艺,研制出正照EMCCD器件.器件的像元尺寸16μm×16μm.器件在-20℃下工作,读出频率10 MHz,倍增增益可达1000倍以上,探测灵敏度5×10-4 lx.%By using burried channel, triple-layer polysilicon, double-layer metal process, a frame transfer EMCCD image sensor with 512×512 pixels has been successfully developed in domestic for the first time. The pixel size is 16μm×16μm. At-20℃and pixel readout frequency of 10MHz , the gain of 1000 can be achieved,anddetection sensitivity reaches 5×10-4lx.
展开▼