基于改进忆阻器的高通滤波器设计与仿真

摘要

In view of problem that traditional memristor model cannot conform to resistance variation characteristics of the memristor of physical model proposed by HP laboratory,the paper proposed an improved memristor model with threshold voltage.The model can simulate "activation" of the memristor very well,and its characteristics conform to the ones of memristor physical model in HP laboratory.Based on the improved model,a high-pass filter circuit was designed and it can change resistance of the memristor by changing output signal of resistance control circuit of the memristor,so as to realize cut-off frequency adjustment of the filter.The SPICE simulation result shows correctness of the design.%针对传统的忆阻器模型存在不能很好地与HP实验室提出的忆阻器物理模型中忆阻器的阻值变化特点相符的问题,提出了一种改进的带有阈值电压的忆阻器模型,该模型能很好地模拟忆阻器的“激活”现象,其特性与HP实验室的忆阻器物理模型相符；基于该改进模型设计了一种高通滤波器电路,该电路通过改变忆阻器阻值控制电路的输出信号来改变忆阻器的阻值,从而实现了滤波器截止频率的调节.SPICE仿真结果验证了设计的正确性.