采用溶胶-凝胶法制备了含有吸收性杂质和非吸收性杂质的SiO2增透膜,采用波长为1 064 nm的激光对其进行了小光斑激光预处理,对比研究了预处理前后的激光损伤差异,研究表明:激光预处理对于洁净的SiO2薄膜影响不大;含10 μm SiO2颗粒杂质的样品微透镜效应很明显,容易成为损伤起始的种子,激光预处理后情况有所改善;含有CeO2颗粒杂质的样品表现出了很强的吸收性质,损伤阈值降低到不足洁净样品的一半.所有样品激光预处理后损伤形貌未发生变化,透光率峰值均有约50 nm的蓝移.%Three kinds of anti-reflective SiO2 films, without impurities, with SiO2 particulate impurities and with CeO2 particulate impurities, were deposited on K9 glass by sol-gel dip-coating method. The influence of impurities on laser-induced damage of films was investigated before and after preconditioning with a 1 064 nm Nd : YAG pulsed laser. No obvious change in morphologies and damage threshold appears for pure films after conditioning. For the films with SiO2 impurities, 10 μm-size SiO2 particles show obvious micro-focusing effect and act as damage-initiating seeds, which can be removed by conditioning. Moreover, the samples with CeO2 impurities have intense absorbing character, and their laser-induced damage threshold is less than half of the others'. After the raster manner laser conditioning, transmittance peaks of all the samples shift to short-wave side about 50 nm with their laser-induced damage morphologies unchanged.
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