Photoluminescence and Electroluminescence on Nanosilicon Deposited by Yb

摘要

Dynamics of photoluminescence(PL) and electroluminescence(EL) on nanosilicon deposited by Yb is investigated.The sharper PL peaks near 700 nm are observed on silicon quantum dots (Si QDs) coated by Yb.The enhanced EL peaks in the wavelength region from 1 200 nm to 1 600 nm are measured on silicon film deposited by Yb.It is discovered that the EL intensity enhances and the peaks number increases with increasing number of Si-Yb layers.The emission wavelength could be manipulated into the window of optical communication by SiYb bonding on nanosilicon.Si-Yb quantum cascade and PIN hybrid light-emitting diode is designed to apply in optical communicating,which is suitable to be integrated on silicon chip.