盐胁迫下外源 Si 对甘草种子萌发及幼苗K+、Na+含量的影响

摘要

The effects of exogenous silicon(0,0.4,0.8,1.2,1.6 and 2.0 mmol/L)on seed germination and the concentrations of K+ and Na+ of licorice(Glycyrrhiza uralensis )under salt stress (100 and 200 mmol/L NaCl)were studied.The results showed that the application of silicon increased the germination rate,germina-tion potential,germination index and root-shoot ratio of seedlings under salt stress,and the improving effect was the best while the silicon concentrations were 0.4 and 2.0 mmol/L.Application of silicon could maintain the balance between K+ and Na+ by improving the absorption of K+ and reduced the absorption of Na+ under salt stress in licorice seedlings.%以乌拉尔甘草(Glycyrrhiza uralensis )种子为试验材料，研究在 NaCl(100和200 mmol/L)胁迫下，不同浓度 Si(0、0.4、0.8、1.2、1.6和2.0 mmol/L)对种子萌发及幼苗根冠比和 K+、Na+含量的影响。结果表明：外源 Si 对盐胁迫下种子的发芽率、发芽势和发芽指数均具有显著的促进作用，且 Si 浓度在0.4和2.0 mmol/L 下作用最佳；Si 可显著增加幼苗的根冠比，幼苗可通过增加 K+吸收，减少 Na+吸收来维持根系内 K+、Na+的平衡。