Algebraic Current-voltage and Voltage Dep endent Resistance Expressions for Ballistic Nano Con-ductors and Their Low Voltage Nonlinearity

摘要

In this study, an algebraic current-voltage (I-V ) equation suitable for the hand-calculation of ballistic nano conductors is derived from Landauer’s formulation. A voltage and temperature dependent re-sistance expression is also obtained. It is shown that the presented algebraic I-V expression and the original Landauer’s formula give the same characteristics as expected. Moreover, the I-V characteristics of ballistic nano conductors are investigated and it is concluded that there is an inescapable nonlinearity originating from the curvature of Fermi-Dirac distribution function in low voltage range. Finally, the total harmonic distortion (THD) of a sample ballistic nano conductor caused from its low voltage nonlinearity is computed via HSPICE simulations.