游离磨粒切割法和金刚石线切割法切割SiC的对比

摘要

通过采用镀铜钢线配合游离磨粒切割法和金刚石线与砂浆配合切割法对SiC 晶锭分别进行切割试验，在对比两种方法的切割效果基础上，探讨两种切割方法对SiC 晶片表面质量和弯曲度的作用和效果，并对比两种方法的优点。通过探讨总结出镀铜钢线配合游离磨粒切割法切割出的SiC 晶片表面质量较好，但用时较长，适用于小型实验；金刚石线与砂浆配合切割法切割出的SiC 晶片几何参数更好且稳定，且加工效率较高，适用于大型生产。%C utting experim ents for SiC ingots w ere taken through two methods:copper-coated steel wire com bined with free abrasive, and diam ond wire com bined with mortar, respectively. A fterw ards, effects to surface quality and waferwar pofas-cutted wafers by the two methods were discussed and the advantages w ere com pared.Itis confirm ed thatthe form er m ethod leads to better surface quality as wellasmoretimecost,which issuitableforsmall-scaleexperiments;whilethelatermethod leadsto better shape param eter as wellas more process efficiency,which is suitable for large-scale producing.