MgO掩蔽层及其腐蚀法图形化工艺的探究

摘要

MgO is selected as a high quality mask material in silicon deep-etching.In this article,the corrosion patterning process parameters of mask has been studied and a set of optimal patterning parameters suiting for MgO film have been obtained.%　　MgO 薄膜对硅的高刻蚀选择比使其成为硅深刻蚀过程中重要的掩蔽层材料。本文采用腐蚀法对 MgO 掩蔽层薄膜进行图形化，得到了一组能够快速对 MgO 薄膜图形化的工艺参数。