Effect of Bi_2 Ti_2O_7 Seeding Layer on Capacitance-voltage Properties of Bi_(3.54)Nd_(0.46)Ti_3O_(12) Films

摘要

Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si structure has been fabricated with a preferentially (111)-orientated Bi 2 Ti 2 O 7 seeding layer as a ferroelectric gate of metal-ferroelectric-insulator field effect transistor.Bi 3.54 Nd 0.46 Ti 3 O 12 and Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 films are both well-crystallized when annealed at 680℃ for 40 min,and have smooth,dense and crack-free surfaces.The width of memory window of the ferroelectric gate increases with increasing electric field applied to the Bi 3.54 Nd 0.46 Ti 3 O 12 thin films.The width of memory window of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si with seeding layer is relatively wider than that of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Si at the same bias voltage,and the counterclockwise hysteresis curve of Au/Bi 3.54 Nd 0.46 Ti 3 O 12 /Bi 2 Ti 2 O 7 /Si is referred to as polarization type switching at different voltages.Bi 2 Ti 2 O 7 seeding layer plays an important role in alleviating the element interdiffusion between Bi 3.54 Nd 0.46 Ti 3 O 12 and Si.