Fabrication of Si_(3)N_(4)/Cu direct-bonded heterogeneous interface assisted by laser irradiation

摘要

Joining of ceramic and metal is a key component in microelectronic device manufacturing,in which the integrity of bonded interface is critical in the performance and stability of the devices.Current methods with a problem of thick transition layer at the interface impeded heat flow,which degraded device service life seriously.Herein,we propose a laser-assisted bonding approach to join ceramic to metal directly without any intermediate material.By focusing the laser on the surface of β-Si_(3)N_(4) ceramic,the Si microcrystalline layer with stacked α-Si_(3)N_(4) nanocrystals was prepared first.The face-centered cubic(fcc)Si and hexagonal close-packed(hcp)β-Si_(3)N_(4) substrate take the coherent orientation relations of[001]_(fcc)║[0001]_(hcp) and(220)_(fcc)║(10■0)_(hcp).Then,the defect-free Si_(3)N_(4)/Cu bonded interface obtained by the reaction of the formed Si and Cu at elevated temperature in the 805-900℃range for 30 min demonstrated a strong and stable joining of ceramic to metal.The introduction of the laser provides a novel approach to join ceramics to metals,and the ceramic/metal component is expected to be a new configuration for package substrate in high-power device applications.