Type Inversion and Certain Physical Properties of Spray Pyrolysed SnO_2:Al Films for Novel Transparent Electronics Applications

摘要

Aluminium doped tin oxide films have been deposited onto glass substrates by using a simplified and low cost spray pyrolysis technique.The Al doping level varies between 0 and 30 at.%in the step of 5 at.%.The resistivity(ρ) is the minimum(0.38 Ω cm) for 20 at.%of Al doping.The possible mechanism behind the phenomenal zig-zag variation in resistivity with respect to Al doping is discussed in detail.The nature of conductivity changes from n-type to p-type when the Al doping level is 10 at.%.The results show that20 at.%is the optimum doping level for good quality p-type SnO_2:AI films suitable for transparent electronic devices.