FeSe0.4 Te0.6超导薄膜的输运性质实验研究

摘要

We successfully deposited the purely c - axis oriented FeSe0.4 Te0.6 thin film, which showed superconducting transition in electrical resistivity about 12 K, by using pulsed laser deposition method. The electrical transport measurements of the thin film were studied with magnetic fields up to 12.0 T. Thermally activated energy was analyzed using simple conventional Ar-rhenius relation and more precise relation which was closer to experimental results. Besides, the vortex glass transition temperatures, the upper critical magnetic field, and the coherent length for the FeSe0.4 Te0.6 thin film were studied.%通过脉冲激光沉积技术制备了超导转变温度约为12 K的FeSe0.4Te0.6超导薄膜,测量了该薄膜晶体结构和在磁场(0-12 T)下的电输运性质.分别用传统的Arrhenius Plots和一种更精确的关系对薄膜的TAFF区的热激活能进行了分析,得到激活能对磁场和温度的指数关系；对两种方法分析结果分析比较,发现第二种方法的分析结果更符合FeSe0.4Te0.6超导薄膜的测量结果.估算了FeSe0.4Te0.6超导薄膜的玻璃态转变温度、上临界场Hc2(0)和相干长度.