基于GaN的宽带功率放大器的仿真

摘要

In modern wireless communication system, the system has even higher reguirement for the output power, efficiency and working bandwidth of the power amplifier. Thus the study on broadband power amplifier becomes very important. GaN, as the new-generation semiconductor material, has much wider forbidden bandwidth, higher breakdown voltage, more excellent thermal stability than Si and GaAs, and thus is widely used in the broadband power amplifier design. Based on GX3442 from Ployfet and with Microwave office, simulation on a broadband PA is done, this PA could work at 0.2 GHz to 1.6 GHz, with output power of more than 49 dBm and maximum efficiency of 55%.%在现代无线通信系统中，系统对功率放大器的功率输出、效率、工作带宽等技术指标的要求愈来愈高。因此，宽带功率放大器的研究变得十分有意义。新一代半导体材料GaN，较Si、 GaAs 等材料，具有禁带宽、击穿场强高、热稳定性优异等特性，在宽带功率放大器的设计中被广泛使用。因此，基于Ployfet 公司的GX3442，利用Microwaveoffice 软件，仿真了一款0.2~1.6 GHz 的末级宽带功率放大器，其输出功率大于49 dBm，效率可达55％。