DEEP LEVELS IN ELECTRON-IRRADIATED SILICON CONTAINING LITHIUM

摘要

Using deep-level transient spectroscopy, the interaction between lithium (Li) and radiation defects has been studied in two aspects: the creation of Li-related defects and the effect of Li on the annealing of radiation defects. It has been pointed out that oxygen in silicon can restrain the interaction between Li and radiation defects. Only when the concentration of Li is not far less than that of oxygen, can this interaction take effect. The Li-related defects E(0.17), E(0.21) E(0.38), E(0.50), H(0.42) and H(0.47) have been observed under different conditions. The similarity and difference between lithium and hydrogen in their interaction with radiation defects have been compared.