机译:AlGaN / AlN / GaN高电子迁移率晶体管的电容电压特性的物理过程分析
Key;
Laboratory;
of;
Microelectronics;
Device;
&;
Integrated;
Technology,;
Institute;
of;
Microelectronics;
of;
Chinese;
Academy;
of;
Sciences,;
Beijing;
100029,;
China;
高电子迁移率晶体管; 氮化镓; 氮化铝; 物理过程分析; 电容; 电压特性; HEMT器件; 正向偏置;