We theoretically investigate the optical properties of an ultra-thin InN layer embedded in InGaN matrix for light emitters. The peak emission wavelength extends from ultraviolet (374 nm) to green (536 nm) with InN quantum well thickness increasing from 1 monolayer to 2 monolayers, while the overlap of electron-hole wave function remains at a high level (larger than 90%). Increase of In content in InGaN matrix provides a better approach to longer wavelength emission, which only reduces the spontaneous emission rate slightly compared with the case of increasing In content of the conventional InGaN quantum well. Also, the transparency carrier density derived from gain spectrum is of the same order as that in the conventional blue laser diode. Our study provides skillful design on the development of novel structure InN-based light emitting diodes as well as laser diodes.
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