Investigation of the inhomogeneous barrier height of an Au/Bi_4Ti_3O_(12)/n-Si structure through Gaussian distribution of barrier height

摘要

A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current-voltage（I-V） characteristics in a temperature range of 300 K-400 K.Obtained I-V data are evaluated by the thermionic emission（TE） theory.Zero-bias barrier height(ΦB0) and ideality factor（n） calculated from I-V characteristics,are found to be temperature-dependent such thatΦB0 increases with temperature increasing,whereas n decreases.The obtained temperature dependence ofΦB0 and linearity inΦB0 versus the n plot,together with a lower barrier height and Richardson constant values obtained from the Richardson plot,indicate that the barrier height of the structure is inhomogeneous in nature.Therefore,I-V characteristics are explained on the basis of Gaussian distribution of barrier height.