Bi-mode逆导门极换流晶闸管结构与特性研究

摘要

Bi-mode逆导门极换流晶闸管( BGCT)是为了改善传统逆导门极换流晶闸管( RC-GCT)电流均匀性和提高硅片有效面积利用率而提出的一种新结构。通过分析BGCT器件的版图布局结构,采用Sentaurus TCAD软件模拟并分析了BGCT、传统结构RC-GCT和IGCT传统功率器件的通态特性、正向阻断特性和关断特性,着重比较了RC-GCT与BGCT在400K温度下不同工作模式下特性差异。分析研究结果表明,BGCT器件能够改善RC-GCT器件的通态特性,提高硅片面积的利用率。%Bi-mode inverse to the gate commutated thyristor( BGCT) is a new uniform structure proposed to improve the current uniformity of the traditional reverse conducting gate commutated thyristor( RC-GCT) and the utilization rate of the effective area of the silicon chip. This paper studied the characteristics of layout structure of BGCT de-vice,the Sentaurus TCAD software simulation and analysis of BGCT,the traditional structure of RC-GCT and IGCT of traditional power device on state characteristics,the forward blocking characteristic and turn off characteristics, compares the differences of RC-GCT and BGCT in different operation temperature modes. Analysis on the character-istics of BGCT devices in this paper show that,research on the state characteristics of BGCT devices can improve RC-GCT device,and the utilization rate of the effective area of the silicon chip.