CuInSe2 (CIS) thin film was prepared on molybdenum substrate using pulse-plating electrodeposition in aqueous solution. The most suitable pulse potential range for co-deposition is found to be from -0.55 to -0.75 V (vs SCE) from linear potential scanning curve. The electrodeposited films were characterized by X-ray diffractometry (XRD), scanning electron microscopy(SEM) and energy dispersive X-ray analysis (EDS). The annealing effects on electrodeposited precursors were investigated. And the influence of pulse parameters on film quality was studied. The chalcopyrite phase CuInSe2 films with smooth surface and stoichiometric composition are obtained at a pulse potential from -0.65 to -0.7 V (vs SCE), a pulse period of 1-9 ms with a duty cycle of 33% and annealing treatment.
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机译:The Application of the Golden Gate Image in Film and Television Media in History Teaching: Taking the Film "Summer Concerto" as an Example =影视媒体中的金门意象在历史教学的运用--以电影《夏天协奏曲》为例