一种低温漂高电源抑制比带隙基准源的设计

摘要

在传统的电流模电压基准结构下,基于一阶补偿后的电压基准输出特性,设计了一个简单的高、低温补偿电路,在宽的温度范围内(-50~150℃),显著提高了电压基准的精度.同时,对电路进行简单的改进,输出电压获得了高的电源抑制比.对设计的电路采用TSMC 65 nm CMOS工艺模型进行仿真,在1.5V的电源电压下,PSRR为-83.6 dB,温度系数为2.27 ppm/℃.%Based on bandgap voltage reference structure in the traditional current mode and the first-order compensation of the voltage reference output characteristics, introducing a subsection compensation circuit,which significantly improve the accuracy of voltage reference in a wide temperature range (- 50 ~150 ℃). At the same time, the circuit is simply improved, the output voltage to obtain a high power supply rejection ratio .Using TSMC 65 nm CMOS process simulation model, in the power supply voltage of 1.5 V, power supply rejection ratio is -83.6 dB, temperature coefficient is 2.27 ppm/℃.