In2S3 is a stable semiconductor material with low toxicity. We prepared In2S3 sensitized solar cel s using low-cost chemical bath deposition methodology. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) were used to reveal the microstructure of the In2S3 sensitized TiO2 nanoporous films. Our results indicated that the deposition temperature has a remarkable effect on the morphology of In2S3 sensitized TiO2 films, which in turn affects the photovoltaic performance of devices. When the deposition temperature was low, the deposition reaction rate was slow, resulting in only minimal deposition. However, if the deposition temperature was increased too much, there was insufficient time for the In2S3 to be deposited within the internal pore structure of the TiO2 mesoporous films. The best homogeneous In2S3 sensitized TiO2 films were obtained with a deposition temperature of 40 °C. At this temperature, the optical absorption of the resulting film was optimal and displayed the largest short circuit current density among the films examined. Moreover, the fil factor was also the best, approaching 65%. The best overal power conversion efficiency was 0.32%.% 硫化铟是一种稳定、低毒性的半导体材料.本文采用低成本的化学浴沉积方法制备了硫化铟敏化太阳电池， X射线衍射(XRD)、光电子能谱(XPS)和扫描电镜(SEM)结果表明形成了硫化铟敏化的二氧化钛薄膜.化学浴沉积温度对所得硫化铟敏化薄膜的形貌有显著的影响，进而影响电池性能.温度太低时，化学浴沉积反应速率太低，只发生少量沉积；温度太高时，化学浴沉积反应速率较快，硫化铟来不及沉积到二氧化钛多孔薄膜内部.当温度在40°C时，硫化铟沉积均匀性最好，薄膜的光吸收性能最佳，电池的短路电流最大，另外，填充因子达到最佳，为65%，电池总体光电转换效率为0.32%.
展开▼
