直接键合的三结太阳能电池研究

摘要

The multi-junction bonding GaInP/GaAs/InGaAsP solar cell was developed. Bonding technology can reduce dis-locations and defects produced in the epitaxial growth process of the lattice mismatch materials, and the defects are restricted within dozens of nanometer layers at the interface without spreading into the inner layers. Bonding solar cell is one of the efficient developing trends in the future. The solar cell interface uses p+ GaAs/n+ InP tunneling junction, and the open circuit voltage is greater than 3.0V. The efficiency is 24%when the structural parameter is not optimized and the anti-reflective film is not prepared. Open circuit voltage shows that the two solar sub cells are connected in series . Results are analyzed and the improvement measures are given. This bonding technology provides a new way for monolithic integration high efficient multi-junction cells.%本文研制了直接键合的三结GaInP/GaAs/InGaAsP太阳电池.直接键合技术可以减少晶格不匹配的材料在外延生长过程中产生的线位错和面缺陷,将缺陷限制在界面几十纳米的薄层而不向内扩散,是未来实现高效多结电池的发展趋势之一.此类电池国内鲜有报道.本文键合三结电池的键合界面采用p+GaAs/n+InP结构,得到电池开路电压3.0 V,在电池结构没有优化的情况下获得效率24%,表面未做减反膜.开路电压表明三结电池实现了串联,为单片集成的高效多结电池提供了新的途径.对实验结果进行了分析并给出了改进措施.