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Enhancing Jc(B,theta) in yttrium barium copper oxide via nano-engineering of pinning structures.

机译:通过钉扎结构的纳米工程增强钇钡氧化铜中的Jc(B,θ)。

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摘要

Critical current density (Jc) has been identified as one of the most critical parameters for the practical application of high temperature superconductors such as YBa2Cu3O7-delta (YBCO). Unfortunately, the Jc of optimized un-doped YBCO films barely satisfies the criteria for these applications. High Jc can be achieved by introducing strong artificial pinning centers in YBCO which can inhibit flux motion and prevent dissipation. However, insertion of strong pins has been observed to strain and poison the YBCO lattice resulting in unnecessary degradation of Tc and low field Jc. In this work, two types of strong pinning centers with negligible effect on the T c and low field Jc were incorporated in YBCO films via strain engineering on the nanoscale. The nanotube pores were generated by depositing YBCO films on vicinal SrTiO3 (STO) substrates. A close correlation between Jc and the magnetic pinning potential Up of the nanotube pores has been demonstrated below the accommodation field, suggesting that nanotube pores are strong pins on the magnetic vortices. Splayed BaZrO 3 nanorords (BZO-NRs) were generated in YBCO film by depositing 2 vol.% BZO-doped YBCO on vicinal STO substrates. The interplay between the lattice strain caused by the large lattice mismatch between YBCO and BZO and the anisotropic strain due to vicinal growth resulted in the dispersed orientation of BZO-NRs. The splayed BZO-NRs led to an enhanced Jc in the entire range of the magnetic field orientation up to 5 T as compared to the non-splayed case of YBCO/BZO-NRs films.
机译:临界电流密度(Jc)已被确定为高温超导体(例如YBa2Cu3O7-δ(YBCO))的实际应用中最关键的参数之一。不幸的是,优化的未掺杂YBCO薄膜的Jc几乎不能满足这些应用的标准。通过在YBCO中引入强大的人工钉扎中心可以实现高Jc,这可以抑制磁通运动并防止耗散。但是,已观察到插入强销会拉紧和毒化YBCO晶格,从而导致Tc的不必要降低和低场Jc。在这项工作中,通过纳米级的应变工程将两种对T c和低场Jc的影响可忽略的强钉扎中心结合到YBCO薄膜中。通过在邻近的SrTiO3(STO)基板上沉积YBCO膜来生成纳米管孔。在调节场以下已经证明了Jc和纳米管孔的磁性钉扎电势Up之间的紧密相关性,这表明纳米管孔是磁涡旋上的强钉子。通过在邻近的STO基板上沉积2%(体积)的BZO掺杂的YBCO,在YBCO薄膜中产生了张开的BaZrO 3纳米级(BZO-NRs)。 YBCO和BZO之间大的晶格失配引起的晶格应变与由于邻位生长而引起的各向异性应变之间的相互作用导致BZO-NRs的分散取向。与未张开的YBCO / BZO-NRs薄膜相比,张开的BZO-NRs在高达5 T的整个磁场取向范围内导致Jc增强。

著录项

  • 作者单位

    University of Kansas.;

  • 授予单位 University of Kansas.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 131 p.
  • 总页数 131
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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