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Investigations on structural and multiferroic properties of artificially engineered lead zirconate titanate-cobalt iron oxide layered nanostructures.

机译:人工设计的锆钛酸钛酸钴钴铁氧化物层状纳米结构的结构和多铁性性质的研究。

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摘要

Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic, electric, and ferroelastic ordering, have drawn increasing interest due to their multi-functionality for a variety of device applications. Since, very rare single phase materials exist in nature this kind of properties, an intensive research activity is being pursued towards the development of new engineered materials with strong magneto-electric (ME) coupling. In the present investigation, we have fabricated polycrystalline and highly oriented PbZr0.53,Ti0.47O3--CoFe 2O4 (PZT/CFO) artificially multilayers (MLs) engineered nanostructures thin films which were grown on Pt/TiO2/SiO2/Si and La 0.5Sr0.5CoO3 (LSCO) coated (001) MgO substrates respectively. using the pulsed laser deposition technique. The effect of various PZT/CFO sandwich configurations having 3, 5, and 9 layers, while maintaining similar total PZT and CFO thickness, has been systematically investigated. The first part of this thesis is devoted to the analysis of structural and microstructure properties of the PZT/CFO MLs. X-ray diffraction (XRD) and micro Raman analysis revealed that PZT and CFO were in the perovskite and spinel phases respectively in the all layered nanostructure, without any intermediate phase. The TEM and STEM line scan of the ML thin films showed that the layered structure was maintained with little inter-diffusion near the interfaces at nano-metric scale without any impurity phase, however better interface was observed in highly oriented films. Second part of this dissertation was dedicated to study of the dielectric, impedance, modulus, and conductivity spectroscopies. These measurements were carried out over a wide range of temperatures (100 K to 600 K) and frequencies (100 Hz to 1 MHz) to investigate the grain and grain boundary effects on electrical properties of MLs. The temperature dependent dielectric and loss tangent illustrated step-like behavior and relaxation peaks near the step-up characteristic respectively. The Cole-Cole plots indicate that the most of the dielectric response came from the bulk (grains) MLs below 300 K, whereas grain boundaries and electrode-MLs effects prominent at elevated temperature. The dielectric loss relaxation peaks shifted to higher frequency side with increase in temperature, finally above 300 K, it went out experimental frequency window. Our Cole-Cole fitting of dielectric loss spectra indicated marked deviation from the ideal Debye type of relaxation which is more prominent at elevated temperature. Master modulus spectra support the observation from impedance spectra, it also indicate that the difference between C g and Cgb are higher compared to polycrystalline MLs indicating less effects of grain boundary in highly oriented MLs. We have explained these electrical properties of MLs by Maxwell-Wagner type contributions arising from the interfacial charge at the interface of the MLs structure. Three different types of frequency dependent conduction process were observed at elevated temperature (>300 K), which well fitted with the double power law, sigma(o) = sigma(0) + A 1on1 + A 2on2, it indicates conduction at: Low frequency (1 kHz) may be due to long range ordering (frequency independent), mid frequency (10 kHz) may be due to short range hopping, and high frequency (1 MHz) due to the localized relaxation hopping mechanism. The last part of the thesis is devoted to the study of the multiferroic and magnetoelectric properties of the ML thin films. Both polycrystalline and highly oriented films showed well saturated ferroelectric and ferromagnetic hysteresis loops at room temperature. Temperature dependence of ferroelectric properties showed that polarization slowly decreases from 300 K to 200 K, with complete collapse of polarization at ∼ 100 K, but there was complete recovery of the polarization during heating, which was repeatable over many different experiments. At the same time, in the same temperature interval the remanent magnetization of the MLs showed slow enhancement in the magnitude till 200 K with three fold increase at 100 K compared to room temperature. This enhancement in remanent magnetization and decrease in remanent ferroelectric polarization on lowering the temperature indicate temperature dependent dynamic switching of ferroelectric polarization. Frequencies and temperatures dependence of the ferroelectric hysteresis loop showed weak frequency dependence for highly oriented MLs, while significant dependence was observed for polycrystalline MLs. The fatigue test showed almost 0-20% deterioration in polarization. The fatigue and strong temperature and frequency dependent magneto-electric coupling suggest the utility of MLs for Dynamic Magneto-Electric Random Access Memory (DMERAM) and magnetic field sensor devices.
机译:Mutiferroics是一类新型的新一代多功能材料,它们同时显示出磁,电和铁弹性有序,由于它们在多种设备应用中的多功能性而受到越来越多的关注。由于自然界中非常罕见的单相材料具有这种特性,因此人们正在大力研究开发具有强磁电(ME)耦合的新型工程材料。在本研究中,我们已经制造了多晶且高度取向的PbZr0.53,Ti0.47O3--CoFe 2O4(PZT / CFO)人工多层(MLs)工程纳米结构薄膜,该薄膜在Pt / TiO2 / SiO2 / Si和La上生长0.5Sr0.5CoO3(LSCO)涂覆(001)MgO衬底。使用脉冲激光沉积技术。已经系统地研究了具有3、5和9层的各种PZT / CFO三明治结构的效果,同时保持了相似的PZT和CFO总厚度。本文的第一部分致力于分析PZT / CFO ML的结构和微观结构。 X射线衍射(XRD)和显微拉曼分析表明,PZT和CFO分别在所有层状纳米结构中分别处于钙钛矿相和尖晶石相中,而没有任何中间相。 ML薄膜的TEM和STEM线扫描表明,在纳米级界面处几乎没有任何杂质相的情况下,层状结构在界面之间几乎没有相互扩散,但是在高取向薄膜中观察到了更好的界面。本文的第二部分专门研究介电,阻抗,模量和电导率光谱。这些测量是在很宽的温度范围(100 K至600 K)和频率范围(100 Hz至1 MHz)上进行的,以研究晶界和晶界对MLs电性能的影响。温度相关的介电常数和损耗角正切分别说明了升压特性附近的阶梯状行为和弛豫峰。 Cole-Cole图表明,大部分介电响应来自低于300 K的块状(晶粒)ML,而在高温下,晶界和电极ML的影响尤为明显。随着温度的升高,介电损耗弛豫峰移至较高频率侧,最终超过300 K,超出了实验频率窗口。我们对介电损耗谱的Cole-Cole拟合表明与理想的Debye型弛豫有明显偏差,而理想的Debye型弛豫在高温下更为明显。主模量谱支持阻抗谱的观察,它还表明C g和Cgb之间的差异比多晶ML高,表明在高取向ML中晶界的影响较小。我们已经通过MLs结构界面处的界面电荷产生的Maxwell-Wagner类型贡献解释了ML的这些电学性质。在升高的温度(> 300 K)下观察到三种不同类型的频率相关的传导过程,该过程很好地符合双幂定律,即sigma(o)= sigma(0)+ A 1on1 + A 2on2,它表示在以下条件下传导:频率(<1 kHz)可能是由于长距离排序(与频率无关),中频(<10 kHz)可能是由于短程跳跃,而高频(<1 MHz)是由于局部弛豫跳跃机制。论文的最后一部分致力于ML薄膜的多铁性和磁电特性的研究。多晶膜和高取向膜在室温下均显示出良好饱和的铁电和铁磁磁滞回线。铁电特性的温度依赖性表明,极化从300 K缓慢降低到200 K,在〜100 K时极化完全消失,但是加热过程中极化完全恢复,在许多不同的实验中都可以重复。同时,在相同的温度间隔内,ML的剩余磁化强度显示缓慢增加,直至200 K,与室温相比,在100 K下增加了三倍。随着温度的降低,剩余磁化强度的增强和剩余铁电极化的减小表明铁电极化的温度相关动态切换。铁电磁滞回线的频率和温度依赖性对于高度取向的ML表现出较弱的频率依赖性,而对于多晶ML则表现出明显的依赖性。疲劳试验表明极化几乎降低了0-20%。疲劳以及与温度和频率有关的强磁电耦合表明了ML在动态磁电随机存取存储器(DMERAM)和磁场传感器设备中的实用性。

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