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Electro-osmotic pumping and ionic conductance measurements in porous membranes.

机译:多孔膜中的电渗泵浦和离子电导率测量。

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摘要

Electro-osmotic (EO) pumps directly convert electrical energy into fluids' kinetic energy, which have many advantages such as a simple and compact structure, no mechanical moving parts, and easy integration. In general, it is easy for EO pumps to generate enough pressure but it has been a challenge for EO pumps to produce a high flowrate. EO pumps have found applications in various micro-/nano-electro-mechanical systems (MEMS/NEMS) and have the potential to impact a variety of engineering fields including microelectronics cooling and bio-analytical systems. This dissertation focuses on the design, fabrication and characterization of EO pumps based on two novel porous membrane materials: SiO2-coated anodic porous alumina and SiNx-coated porous silicon.;High quality porous alumina membranes of controllable pore diameters in the range of 30-100 nm and pore lengths of 60-100 mum were fabricated by electrochemical anodization. The pores are straight, uniform and hexagonally close-packed with a high porosity of up to 50%. The inner surface of the pore was coated with a thin layer (∼5 nm) of SiO2 conformally to achieve a high zeta potential. The EO pumping flowrate of the fabricated anodic alumina membranes, coated and uncoated, was experimentally measured. Results indicate that the high zeta potential of the SiO2 coating increases the pumping flowrate even though the coating reduces the porosity of the membrane. The nanostructured SiO2-coated porous anodic alumina membranes can provide a normalized flowrate of 0.125 ml/min/V/cm2 under a low effective applied voltage of 3 V, which sets a record high normalized flowrate under low applied voltage.;To realize field effect control of EO pumping, we designed and fabricated SiNx-coated porous silicon membranes with the silicon core as the electrode to apply a transverse gate potential. The gate potential will modulate the zeta potential of the pore wall and thereby provide control over the EO flowrate. The membranes were fabricated out of heavily doped silicon wafers using microfabrication techniques. The pores have a 15 mum x 40 mum cross sectional area with a thin layer of SiNx coated conformally over the pores by low-pressure chemical vapor deposition (LPCVD). The range of gate voltages applied was from -45 V to + 40 V. For Vg 0, current leakage through the SiNx film was observed whereas negligible leaking current was detected for Vg > 0. This current rectification effect is known as electrolytic rectification, as a result of which a greater EO flow control, nearly 70% reduction in flow velocity, was observed for positive gate bias and 15% flow velocity enhancement under negative gate bias of similar magnitude.;Ionic current is closely related to EO flow and the last part of the dissertation is devoted to ionic current measurements through commercially made nanoporous glass membranes (4 nm average pore diameter). This study was motivated by a molecular dynamics (MD) simulation highlighting an unusual ionic current trend in a 3 nm diameter pore having high surface charge density at high electrolyte concentrations. The ionic current was measured with two kinds of electrolytes---NaCl and KCl. The experimental results, however, indicated an expected linear trend of ionic current for electrolyte concentrations beyond 1 M, contrary to the results of the MD simulation study, which was attributed to a low surface charge density measured for the porous glass membranes.
机译:电渗(EO)泵将电能直接转换为流体的动能,具有许多优点,例如结构简单紧凑,没有机械运动部件以及易于集成。通常,EO泵很容易产生足够的压力,但对于EO泵要产生高流量一直是一个挑战。 EO泵已在各种微/纳米机电系统(MEMS / NEMS)中找到了应用,并有可能影响包括微电子冷却和生物分析系统在内的各种工程领域。本论文着重于基于两种新型多孔膜材料的EO泵的设计,制造和表征:SiO2包覆的阳极多孔氧化铝和SiNx包覆的多孔硅。孔径可控制在30-300之间的高质量多孔氧化铝膜通过电化学阳极氧化制备100nm和60-100μm的孔长。孔是直的,均匀的并且六角形密堆积,孔隙率高达50%。孔的内表面共形地涂有一层薄薄的SiO2层(约5 nm),以实现较高的Zeta电位。实验测量了已涂覆和未涂覆的阳极氧化铝膜的EO泵送流量。结果表明,即使涂层降低了膜的孔隙率,SiO2涂层的高ζ电位也增加了泵送流量。纳米结构的SiO2包覆的多孔阳极氧化铝膜在3 V的低有效施加电压下可提供0.125 ml / min / V / cm2的归一化流速,这在低施加电压下创下了高的归一化流速。为了控制EO抽运,我们设计并制造了以硅芯为电极的SiNx涂层多孔硅膜,以施加横向栅极电势。栅极电势将调节孔壁的ζ电势,从而提供对EO流速的控制。膜是使用微加工技术由重掺杂的硅晶片制成的。所述孔具有15μm×40μm的横截面积,并且通过低压化学气相沉积(LPCVD)在孔上共形地涂覆了一层SiNx薄层。施加的栅极电压范围为-45 V至+ 40V。对于Vg <0,观察到通过SiNx膜的电流泄漏,而对于Vg> 0,则检测到的泄漏电流可忽略不计。这种电流整流作用称为电解整流,结果,在类似大小的负门极偏置下,对于正门极偏置,观察到了更大的EO流量控制,流速降低了近70%;在负门极偏置下,流速提高了15%。论文的最后一部分致力于通过商业化制造的纳米多孔玻璃膜(平均孔径4 nm)进行离子电流测量。这项研究是由分子动力学(MD)模拟推动的,该模拟强调了在高电解质浓度下具有高表面电荷密度的直径3 nm的孔中异常的离子电流趋势。用两种电解质-NaCl和KCl测量离子电流。然而,实验结果表明,对于浓度超过1 M的电解质,离子电流具有预期的线性趋势,这与MD模拟研究的结果相反,MD模拟研究的结果归因于多孔玻璃膜的低表面电荷密度。

著录项

  • 作者

    Vajandar, Saumitra K.;

  • 作者单位

    Vanderbilt University.;

  • 授予单位 Vanderbilt University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 148 p.
  • 总页数 148
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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