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THIN FILM COPPER-INDIUM-DISELENIDE/CADMIUM(ZINC)SULFUR HETEROJUNCTION SOLAR CELL: CHARACTERIZATION AND MODELING.

机译:薄膜铜-铟二硒化物/镉(锌)硫异质结太阳能电池:表征和建模。

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摘要

The results of experimental measurements and characterization of high efficiency, thin film CuInSe(,2)/Cd(Zn)S solar cells provided by Boeing are reported. These devices are produced by elemental evaporation; they have very high I(,SC) but lower than expected V(,OC) and FF. An automated, multi-purpose experimental station was developed which can carry out capacitance, current, spectral response measurements as a function of voltage, frequency, wavelength, light bias intensity and temperature. The device is modeled as a p-i-n heterojunction where the interface largely determines the device properties and transport. Long time constants of capacitance transients were observed as light or voltage bias was changed. From such transient data it is deduced that a bulk deep level hole trap exists in the selenide which has a density nearly the same as the free carrier density. It was also observed that the photocurrent is strongly bias dependent in violation of the superposition principle. It is shown, by using chopped light data of collection efficiency and the dark I-V, that the "light" diode can be fully explained on the basis of a voltage dependence of the photocurrent. The crossover of light and dark I-V curves is similarly explained. The effects of such a voltage dependent collection factor on all cell parameters are analyzed and explained. Heat treatments were carried out, and device parameters and cell performance were monitored as a function of baking. It is concluded that baking mainly improves the selenide properties rather than improving the interface. A detailed interface charging model is proposed which successfully accounts for A, I(,O) and the voltage dependence of the photocurrent. It is concluded that higher efficiencies, on the order of 13-14%, are possible if selenide conductivities can be increased, R(,S) lowered, conduction band discontinuity reduced, back contact improved and higher energy photons are utilized in I(,SC) by an electroluminescent front cover.
机译:报告了由波音公司提供的高效薄膜CuInSe(,2)/ Cd(Zn)S太阳能电池的实验测量和表征结果。这些装置是通过元素蒸发产生的。它们的I(,SC)非常高,但低于预期的V(,OC)和FF。开发了一个自动化的多功能实验站,它可以根据电压,频率,波长,光偏置强度和温度执行电容,电流,光谱响应测量。该器件被建模为p-i-n异质结,其中接口在很大程度上决定了器件的特性和传输。随着光或电压偏置的变化,观察到了电容瞬变的长时间常数。从这样的瞬态数据可以推断出,在硒化物中存在一个大的深能级空穴陷阱,其密度几乎与自由载流子密度相同。还观察到,光电流强烈地依赖偏置,这违反了叠加原理。通过使用收集效率和暗I-V的切碎的光数据显示,可以基于光电流的电压依赖性充分解释“亮”二极管。明亮的和黑暗的I-V曲线的交叉也得到类似的解释。分析并解释了这种电压依赖性收集因子对所有电池参数的影响。进行热处理,并监测设备参数和电池性能与烘烤的关系。结论是,烘烤主要改善了硒化物的性能,而不是改善了界面。提出了详细的接口充电模型,该模型成功地说明了A,I(,O)和光电流的电压依赖性。结论是,如果可以提高硒化物的电导率,降低R(,S),降低导带不连续性,改善背向接触并且在I(,)中使用更高的能量光子,则可以实现13-14%左右的更高效率。 SC)的前盖。

著录项

  • 作者

    ERON, MURAT NEZIR.;

  • 作者单位

    Drexel University.;

  • 授予单位 Drexel University.;
  • 学科 Physics Electricity and Magnetism.
  • 学位 Ph.D.
  • 年度 1984
  • 页码 212 p.
  • 总页数 212
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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