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Magnetic sensors based on topological insulators.

机译:基于拓扑绝缘体的磁传感器。

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摘要

The ever-increasing demands for higher computing capabilities and low energy consumption has necessitated the developing of micro or nano electronics and sensors. This results in increasing demand for faster, higher performance, more compact and low energy consumption devices and sensors which pushes microelectronics to its physical limit. Driven by size, cost, sensitivity, reliability and power consumption, the electronic and magnetic related devices are entering a completely new age where innovations on new materials and physics are being explored. Among the most promising materials, magnetoelectric multiferroic (MEMF) and topological insulators (TI) have attracted a great deal of interest, since they are promising for their unique properties and innovative applications. The coupling of electric and magnetic properties of MEMF and the ultrahigh surface carrier mobility of TI enlighten the design of devices with extremely low thermal losses and energy cost.;However, most of the device implementations of these material systems are still in status of ideas and laboratory prototypes. The prospects of practical realization of devices based on MEMF and TI encounter several critical challenges: the low ME coupling coefficient and current leakage in magnetoelectric(ME) sensor; fabrication large scale, low roughness and large terrace width of TI thin films for industry utilization; the high bulk conductivity and low sensitivity of TI based magnetic sensors. The present thesis will address some problems and challenges based on the above questions.;In this work, several aspects regarding to achieve a high performance and low energy consuming devices were investigated including: systemically studied and manipulated the energy band structure of TI for nanosized electronics and sensors application; developed Hall effect sensor and anomalous Hall effect sensor based on magnetically doped topological insulator; explored a method to increase the ME coupling coefficient of ME sensors; There are nine chapters in this dissertation. Chapter 1 gives general background to readers on magnetic sensors which used widely in daily life. Basic physics of two kinds of important materials: topological insulators and MEMF composites will also be introduced. Besides that, chapter 1 will also introduce a proposed switching device which integrates both two kinds of materials. The last part of chapter 1 will be the motivation and objectives of work in this dissertation. Chapter 2 will review the experiments, techniques and equipment used for research in this dissertation including sample fabrication methods and testing methods. Starting from chapter 3, topological insulators material fabrication and sensor application will be introduced based on different kind of TIs. Study on MEMF sensors will be introduced in chapter 8. Chapter 9 is a summary of all the work and gives some general conclusions of this dissertation.
机译:对更高的计算能力和低能耗的不断增长的需求已导致开发微米或纳米电子学和传感器。这导致对更快,更高性能,更紧凑和更低能耗的设备和传感器的需求不断增长,这将微电子技术推向了物理极限。在尺寸,成本,灵敏度,可靠性和功耗的驱动下,电子和磁性相关设备进入了一个全新的时代,正在探索新材料和物理的创新。在最有前途的材料中,磁电多铁性(MEMF)和拓扑绝缘体(TI)引起了极大的兴趣,因为它们以其独特的性能和创新的应用而有前途。 MEMF的电磁特性与TI的超高表面载流子迁移率的结合启发了具有极低热损耗和能源成本的器件设计;然而,这些材料系统的大多数器件实现仍处于思想和实践的状态。实验室原型。基于MEMF和TI的器件的实际实现前景面临几个关键挑战:低ME耦合系数和磁电(ME)传感器中的电流泄漏; TI薄膜的大规模制造,低粗糙度和大平台宽度的制造,以供工业应用;基于TI的磁传感器的高体积电导率和低灵敏度。本论文将基于上述问题解决一些问题和挑战。;在这项工作中,研究了有关实现高性能和低能耗设备的几个方面,包括:系统地研究和操纵TI用于纳米级电子的能带结构。和传感器应用;基于磁性掺杂拓扑绝缘子,开发了霍尔效应传感器和异常霍尔效应传感器;探索了一种提高ME传感器ME耦合系数的方法。本论文共九章。第1章向读者介绍了在日常生活中广泛使用的磁传感器的一般背景。还将介绍两种重要材料的基本物理学:拓扑绝缘体和MEMF复合材料。除此之外,第一章还将介绍一种将两种材料都集成在一起的开关设备。第一章的最后一部分将是本文的工作动机和目标。第2章将对本文研究的实验,技术和设备进行回顾,包括样品制备方法和测试方法。从第3章开始,将基于不同类型的TI介绍拓扑绝缘子的材料制造和传感器应用。第8章将介绍对MEMF传感器的研究。第9章是所有工作的总结,并给出了本文的一些一般性结论。

著录项

  • 作者

    Ni, Yan.;

  • 作者单位

    Iowa State University.;

  • 授予单位 Iowa State University.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 2016
  • 页码 146 p.
  • 总页数 146
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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