The objective of this research is to study the electrical resistances of materials that are potentially useful as resistance strain gages at 1000;The resistivities of the transition metal compounds increased and their TCRs and electrical stabilities decreased with an increase in the vacancy concentrations. The resistivity saturated at about 1000 microohm-cm, for resistivities larger than 1000 microohm-cm, negative TCR were observed.;The TCR of stoichiometric transition metal nitrides decreased monotonically in going from compounds of metal of group VI to those of group V then to those of group IV of the period table. Also the TCR of transition metal nitrides and carbides with transition metals in the same column of the period table decreased as quantum number of the transition metal increased. Carbides had lower TCR than the corresponding nitrides.;The change in resistance of B;A set of criteria were set and used in selection of strain gage candidate materials that are electrical stable and reproducible at all temperatures up to the operating temperature (1000;The decrease in resistance with increase in temperature was faster in ;Due to their low TCR and good stability, TiC, ZrC, B
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