High performance double heterostructure and quantum well waveguide phase modulators in gallium arsenide/aluminum gallium arsenide.

摘要

he basic performance and design considerations of novel double heterostructure (DH) depletion edge translation (DET) and quantum well (QW) waveguide phase modulator designs are examined. Record phase shift efficiencies (;The undoped QW design is modeled and tested, and the 17 well device is found to be comparable in phase shift efficiency (;Impurity induced disordering techniques were used to successfully fabricate efficient phase modulators. Another disordering technique used argon implantation for the first reported fabrication of waveguides and lasers.;Frequency response was measured on one device to 2.1 GHz (50 ;The internal propagation loss was