LNA and mixer design study for 900 MHz receiver applications.

摘要

The implementation of a radio frequency front end receiver operating in the 900 MHz band is explored in this thesis. The low noise amplifier (LNA) and mixer are designed using an advanced silicon bipolar process in which monolithic inductors and baluns are to be made available.; The emphasis of the LNA design was placed on achieving a minimal power consumption while satisfying the desired performance. A cascode and common-emitter configuration for the LNA are explored. The information presented should be sufficient to easily modify the design to achieve a desired performance. An existing mixer, intended for 1.9 GHz operation and implemented in 0.8 {dollar}mu{dollar}m BiCMOS technology was measured and simulated. The design was modified for 900 MHz operation using the advanced 0.5 {dollar}mu{dollar}m silicon bipolar process.; At a supply voltage of 1.0 V, the common-emitter LNA has a power dissipation of 4 mW and third-order input intercept of {dollar}-{dollar}5.5 dBm, with a 1.27 dB noise figure and 13.9 dB gain. The cascode LNA has an input intercept of {dollar}-{dollar}5.6 dBm with a noise figure of 1.43 dB and 14.8 dB gain. At a supply voltage of 1.9V, the power dissipation of the cascode LNA is less than 6 mW. The 0.8 {dollar}mu{dollar}m double-balanced mixer was measured to provide a conversion gain of 7.9 dB with a third order input intercept of {dollar}-{dollar}3.6 dBm and single-sideband noise figure of 14.3 dB. Power dissipated is less than 25 mW at a supply voltage of 3V. In the advanced process technology, a double-balanced mixer gave an input intercept of +2.6 dBm with a 9.7 dB single-sideband noise figure and +3.4 dB power conversion gain. Power dissipated by this mixer is less than 18 mW at a supply voltage of 3V. (Abstract shortened by UMI.)