Laue diffraction, UV reflectivity, and Erbium(3+)-related luminescence studies in silicon carbide polytypes.

摘要

xperimental and computer simulated transmission Laue diffraction patterns are presented for 4H, 6H, and 15R SiC in the ;Photoluminescence investigations of erbium implanted SiC polytypes 3C, 4H, 6H, and 15R are presented. The intra 4f-shell, ;Room temperature electroluminescence investigations of erbium implanted 6H SiC p-n junctions are presented. There is no significant difference between the Er;Room temperature uv-reflectivity measurements are presented for the SiC polytypes 3C, 4H, 6H, and 15R. The experimental uv-reflectivity spectra are compared to the spectra calculated by Professors W. R. L. Lambrecht and B. Segall at Case Western Reserve University, Cleveland, Ohio, using Linear Muffin Tin Orbital band structure calculations. The distinguishing spectral feature is a peak near 7 eV in the non-cubic polytypes. This feature is associated with a region of k space near the T (i.e.