InP-based optoelectronic integration technologies for optical interconnection and communication.

摘要

Indium phosphide (InP) based optoelectronic integration technologies for optical interconnection and communication systems have been studied. First, both the optoelectronic integrated circuits (OEIC) and self-electrooptic effect devices (SEED) approaches to smart pixels are systematically analyzed. The advantages and limitations of the two approaches are then compared, considering such system performance issues as the maximum information flux density, temperature sensitivity, and optical coupling efficiency. The results show that the maximum information flux density of two-dimensional (2D) optoelectronic and FET-SEED logic gates is approximately 200GHz/cm