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Fabrication and characterization of VCSEL based smart pixels

机译:基于VCSEL的智能像素的制作和表征

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摘要

Vertical-cavity surface-emitting laser (VCSEL)-based smart pixel arrays are very well suited for parallel optoelectronic processing and board-to-board interconnection. The integration of VCSELs with foundry fabricated integrated circuits is the key technology required to fabricate the smart pixels needed for these applications.;In the research of this dissertation, three hybrid integration techniques for bonding VCSELs to foundry fabricated microelectronic integrated circuit chips have been developed, characterized and compared. Each of the three bonding techniques used different ways of attaching the VCSEL to the integrated circuits and making electrical contacts. All three techniques remove the substrate from the VCSEL wafer leaving an array of individual VCSELs bonded to individual pixels.;This dissertation presents the successfully bonding of 8 x 8 and/or 4 x 4 VCSEL arrays to CMOS, MESFET and GaAs dummy chips using these three different bonding techniques. The electrical, optical and thermal characteristics of the bonded VCSEL arrays were measured in order to evaluate these bonding techniques. The functionality of the smart pixels with bonded VCSELs was also demonstrated.;The measured threshold voltage of the bonded VCSEL is as low as 1.5V and the series resistance is as low as 60O, indicating good electrical contacts. Optical power of 3mW for a VCSEL with a 14mum oxide-confined aperture was also observed indicating good thermal contact. The VCSELs were operated at 200Mb/s (our equipment limit) with the rise and fall times of the optical output being <1nS. The thermal resistance of the VCSELs bonded to a GaAs substrate was found to be as low as 1100K/W, indicating a high quality contact. Less than 100K/W thermal crosstalk was also observed in the VCSEL arrays with a 250mum pitch.;A two-dimensional thermal transfer model was constructed to analyze the heat transfer of the bonded VCSELs. The model predicted a rapid increase of thermal resistance when the size of the solder bonding pads is less than 10mum. The simulation also verified that the thermal resistance of the VCSEL bonded to a CMOS chip could be reduced by adding vias through the dielectric layers of the CMOS chip or increasing the thickness of the top gold traces.
机译:基于垂直腔表面发射激光器(VCSEL)的智能像素阵列非常适合于并行光电处理和板对板互连。 VCSEL与晶圆代工集成电路的集成是制造这些应用所需的智能像素所需的关键技术。本论文的研究中,开发了三种将VCSEL与晶圆代工微电子集成电路芯片结合的混合集成技术,特征和比较。三种键合技术中的每一种都使用不同的方式将VCSEL附着到集成电路上并进行电接触。所有这三种技术都从VCSEL晶圆上去除了基板,留下了粘合到单个像素的单个VCSEL阵列。本论文介绍了使用这些技术成功地将8 x 8和/或4 x 4 VCSEL阵列粘合到CMOS,MESFET和GaAs虚拟芯片的方法。三种不同的粘合技术。测量了键合VCSEL阵列的电,光和热特性,以评估这些键合技术。还展示了具有键合VCSEL的智能像素的功能。;键合VCSEL的测量阈值电压低至1.5V,串联电阻低至60O,表明良好的电接触。还观察到具有14mum氧化物限制孔径的VCSEL的3mW光功率,表明良好的热接触。 VCSEL以200Mb / s(我们的设备极限)运行,光输出的上升和下降时间小于1nS。发现结合到GaAs衬底上的VCSEL的热阻低至1100K / W,表明接触质量高。在间距为250μm的VCSEL阵列中也观察到不到100K / W的热串扰。;建立了二维热传递模型来分析键合VCSEL的热传递。该模型预测,当焊料焊盘的尺寸小于10μm时,热阻将迅速增加。仿真还证实,通过添加穿过CMOS芯片介电层的过孔或增加顶部金走线的厚度,可以降低与CMOS芯片结合的VCSEL的热阻。

著录项

  • 作者

    Pu, Rui.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Electrical engineering.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 106 p.
  • 总页数 106
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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