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UHV-STM studies of cobalt deposited on clean, oxygen- and sulfur-covered molybdenum(110).

机译:UHV-STM研究钴沉积在干净的,氧气和硫覆盖的钼上的钴(110)。

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摘要

Metal deposition and growth are critical to a number of technologies including, particle size control in heterogeneous catalysis and deposition of interconnects in semiconductor processing. As the demand increases for new materials that are more selective in reactivity and more uniform at nanometer dimensions, it is important to understand the effect of the particle-substrate interface on thin film morphology.;Herein, we examine the surface structure and morphology of cobalt deposited on clean, sulfur- and oxygen-covered Mo(110) using scanning tunneling microscopy and low energy electron diffraction. We find that the morphology of the Co deposited at 400 K is strongly dependent on the nature of the interface. Furthermore, the morphology is not predicted for all cases by bulk thermodynamic quantities, which have been used in the literature to explain the growth modes of metals on metal oxides. We find that two-dimensional islands of cobalt grow on clean and S-covered Mo(110). Three-dimensional growth would be predicted on S-covered Mo(110) based on bulk heats of formation of Co- and Mo-sulfides. Three-dimensional growth occurs on oxygen-covered Mo(110), in accord with predictions based on heats of formation of bulk oxides. The difference between the growth mode of the cobalt on sulfur- and oxygen-covered Mo(110) is explained in terms of differences in microscopic bonding at the interface.;The thermodynamic stability of the Co islands deposited on modified Mo(110) was examined by heating to 760 K. The islands in the Co/S/Mo(110) system coalesced upon heating forming two-dimensional islands which are greater than an order of magnitude larger than in the unannealed case. In addition, sulfur appears to migrate from the Mo(110) to the Co islands upon heating, based on the fact that oxygen no longer adsorbs on the islands indicating site-passivation. In contrast, upon heating the Co/O/Mo(110) system, surface oxygen diffuses into the bulk Mo(110) creating more Mo-like sites. Consequently, the three-dimensional Co islands decrease in height and become more anisotropic, indicative of the more "wetting"-like behavior found in the Co/Mo(110) and Co/S/Mo(110) systems.
机译:金属的沉积和生长对于许多技术至关重要,包括异相催化中的粒度控制以及半导体加工中互连的沉积。随着对反应活性更具选择性,纳米尺寸更均匀的新材料的需求增加,了解颗粒-基底界面对薄膜形态的影响非常重要。在此,我们研究了钴的表面结构和形态。沉积在干净的,硫和氧覆盖的Mo(110)上,使用扫描隧道显微镜和低能电子衍射。我们发现,沉积在400 K处的Co的形态在很大程度上取决于界面的性质。此外,不能通过整体热力学量来预测所有情况下的形貌,这在文献中已被用来解释金属在金属氧化物上的生长方式。我们发现二维钴岛在干净且含S的Mo(110)上生长。基于Co和Mo硫化物形成的整体热量,在S覆盖的Mo(110)上预测了三维生长。三维生长发生在氧气覆盖的Mo(110)上,这与基于块状氧化物形成热的预测相符。通过界面处微观键合的差异解释了钴在硫和氧覆盖的Mo(110)上的生长方式之间的差异。;研究了沉积在改性Mo(110)上的Co岛的热力学稳定性通过加热到760K。Co/S/Mo(110)系统中的岛在加热时会聚结,形成二维岛,该岛比未退火的情况大一个数量级。此外,基于氧气不再吸附在岛上的事实,表明位置钝化,硫在加热时似乎从Mo(110)迁移到Co岛。相反,在加热Co / O / Mo(110)系统时,表面氧扩散到整体Mo(110)中,从而形成更多类似Mo的部位。因此,三维Co岛的高度减小,并且变得更加各向异性,这表明在Co / Mo(110)和Co / S / Mo(110)系统中发现了更加“湿润”的行为。

著录项

  • 作者

    Clark, Philip Gerard, Jr.;

  • 作者单位

    Harvard University.;

  • 授予单位 Harvard University.;
  • 学科 Chemistry Physical.;Engineering Materials Science.;Chemistry Analytical.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 147 p.
  • 总页数 147
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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