Multidimensional Monte Carlo simulation of ion implantation into complex structures.

摘要

As devices scale to deep submicron dimensions, 1-dimensional process and device simulation is becoming less and less accurate. Specifically, modern ion implantation simulators should be able to provide accurate 2-D/3-D impurity and defect concentration profiles for topographically complex device structures, such as the source/drain region in the vicinity of the gate electrode. In addition, a wide range of materials (both crystalline and amorphous) should be supported, such as crystalline and amorphous silicon, silicon oxide and nitride, as well as photoresist. This work presents the development of a new simulation platform, TOMCAT, which accomplishes these tasks in a highly efficient manner. The algorithms for efficient geometry generation and particle propagation are presented. Finally, applications of TOMCAT to technology design are discussed.