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Integral resistors and capacitors for mixed-signal packages using electroless plating and polymer-ceramic nanocomposites.

机译:使用化学镀和聚合物陶瓷纳米复合材料的混合信号封装的集成电阻器和电容器。

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摘要

In this work, new approaches to achieving integral resistors and capacitors on large area substrates at low temperatures in a high density wiring (HDW) environment using non-vacuum deposition techniques are introduced. This includes the use of polymer-ceramic nanocomposites for integral capacitors and electroless plating for integral resistors. From the literature review it is believed that resistors in the range of 5–50 ohm/square and capacitors in the range of 1–20 nF/cm2 can satisfy most of the mixed-signal application needs. The proposed materials can satisfy this need as demonstrated in this work. Several test vehicles were fabricated and measured to characterize the material properties, and demonstrate conventional and novel circuits for mixed-signal applications. To begin with, several polymer-ceramic combinations were analyzed under varying conditions to gain a fundamental understanding of the material system. Experimental advances have been made to achieve high dielectric constant values for both epoxy-ceramic and polyimide-ceramic systems. These material systems in general can satisfy specific capacitances in the range of 1–22 nF/cm2. These materials were found to be stable into the GHz range and have low loss-tangent. For electroless resistors, several plating baths were studied and a combination of Ni-P/Ni-W-P was found to produce the best results. Uniform plating was achieved through better nucleation of PdCl2 catalyst through the use of organosilane surface treatment. The Ni-P/Ni-W-P films produced sheet resistance in the range of 5–50 ohm/square and TCR below 50 ppm/°C. The material is stable into the GHz range. Upon optimizing the electrical properties and processing of capacitors and resistors, several test vehicles were fabricated to demonstrate some conventional and novel passive structures for RF and mixed-signal applications (e.g., filters, delay lines, etc.). Some of the structures were modeled using MDS and PSPICE and a good correlation between measured and modeled results were obtained. Capacitors on large area PWB substrates using meniscus coating are also demonstrated with a typical capacitance of 10 nF/cm2. The yield of the capacitor structures is found to be affected by the surface roughness of the bottom copper electrode. Resistors have been demonstrated on 6 x 6 substrates using a simple set-up.
机译:在这项工作中,介绍了使用非真空沉积技术在高密度布线(HDW)环境中在低温下在大面积基板上实现集成电阻器和电容器的新方法。这包括将聚合物陶瓷纳米复合材料用于集成电容器,并将化学镀用于集成电阻器。根据文献回顾,可以相信,在5–50 ohm / square范围内的电阻器和在1–20 nF / cm 2 范围内的电容器可以满足大多数混合信号应用需求。如本工作所示,所提出的材料可以满足这一需求。制造并测量了几种测试工具以表征材料特性,并演示了用于混合信号应用的常规电路和新型电路。首先,在不同的条件下分析了几种聚合物-陶瓷的组合,从而对材料系统有了基本的了解。为了在环氧-陶瓷和聚酰亚胺-陶瓷体系中都获得高介电常数,已经取得了实验性进展。这些材料系统通常可以满足1–22 nF / cm 2 的比电容。发现这些材料在GHz范围内稳定,损耗角正切值低。对于化学电阻器,研究了几种电镀液,发现结合使用Ni-P / Ni-W-P可获得最佳效果。通过使用有机硅烷表面处理,使PdCl 2 更好地成核,可以实现均匀镀覆。 Ni-P / Ni-W-P薄膜的薄层电阻范围为5-50 ohm / square,TCR低于50 ppm /°C。该材料在GHz范围内稳定。在优化电性能以及电容器和电阻器的处理后,制造了几种测试工具,以演示一些用于射频和混合信号应用的常规和新型无源结构(例如,滤波器,延迟线等)。使用MDS和PSPICE对某些结构进行了建模,并获得了测量结果和建模结果之间的良好相关性。还证明了使用弯月面涂层的大面积PWB基板上的电容器的典型电容为10 nF / cm 2 。发现电容器结构的成品率受底部铜电极的表面粗糙度的影响。已经通过简单的设置在6 '' x 6 ''基板上演示了电阻。

著录项

  • 作者

    Chahal, Premjeet.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1999
  • 页码 235 p.
  • 总页数 235
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;
  • 关键词

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