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Theory and design of active LC filters on silicon.

机译:硅上有源LC滤波器的理论和设计。

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摘要

The demand for higher levels of integration in wireless transceivers calls for integrated RF filters. These filters usually have high- Q bandpass frequency response, and thus cannot be realized only with the lossy reactive components available in today's silicon technologies. Q-enhancement techniques are used in this thesis to boost the Q of reactive components. The implementation of Q enhancement involves negative resistors, which are built with transistors, and can be noisy and nonlinear. Hence, the filters' dynamic range is limited. Nevertheless, it can be shown that with the same power dissipation, the dynamic range of an active LC filter can be larger than that of a Gm-C filter. While at present the dynamic range of active LC filters may still not be large enough to meet receivers' requirement, it may be sufficient for certain applications in transmitters (for example, to clean up the signal following a mixing operation). The range of application will expand as reactive elements with higher quality factor are realized.;One problem faced by active LC filters on silicon is to achieve exact frequency response. Both on-chip inductors and capacitors have losses and parasitics to the substrate, which cannot be easily absorbed into the filter's transfer function. Pre-distortion techniques can be used to reduce this problem, but a systematic solution is still lacking.;In order to make an active LC filter insensitive to parasitics, process variations and temperature changes, an automatic tuning system is designed to be an integral part of the filter. This tuning system can tune the capacitances, and thus the center frequency of the filter, and the negative resistances, and thus the Q of the filter. In order for the tuning system to operate at high frequencies, a new tuning technique is proposed for loss control.;Two prototype filters and their tuning systems are implemented on silicon to demonstrate the feasibility for active LC filters to achieve usable dynamic range with reasonable power consumption, and to validate the proposed tuning techniques.
机译:对无线收发器中更高集成度的需求要求集成RF滤波器。这些滤波器通常具有高Q带通频率响应,因此不能仅通过当今硅技术中可用的有损耗电抗元件来实现。本文采用Q增强技术来提高反应成分的Q。 Q增强的实现涉及负电阻,该负电阻由晶体管构成,并且可能有噪声和非线性。因此,滤波器的动态范围受到限制。但是,可以证明,在相同的功耗下,有源LC滤波器的动态范围可以大于Gm-C滤波器的动态范围。尽管目前有源LC滤波器的动态范围可能仍不足以满足接收器的要求,但对于发送器中的某些应用来说可能就足够了(例如,在混频操作之后清理信号)。随着实现具有更高品质因数的电抗元件,应用范围将扩大。硅上有源LC滤波器面临的一个问题是实现精确的频率响应。片上电感器和电容器均具有对衬底的损耗和寄生效应,无法轻易将其吸收到滤波器的传递函数中。可以使用预失真技术来减少此问题,但仍然缺乏系统的解决方案。为了使有源LC滤波器对寄生虫,工艺变化和温度变化不敏感,将自动调谐系统设计为必不可少的部分过滤器的该调谐系统可以调谐电容,从而调谐滤波器的中心频率,并且可以调谐负电阻,从而调谐滤波器的Q。为了使调谐系统在高频下工作,提出了一种用于损耗控制的新调谐技术。;在硅上实现了两个原型滤波器及其调谐系统,以证明有源LC滤波器以合理的功率实现可用动态范围的可行性消耗,并验证建议的调整技术。

著录项

  • 作者

    Li, Dandan.;

  • 作者单位

    Columbia University.;

  • 授予单位 Columbia University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2000
  • 页码 148 p.
  • 总页数 148
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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