Design and Implementation of a GaN-Based Three-Phase Active Power Filter

摘要

Renewable energy (RE)-based power generation systems and modern manufacturing facilities utilize a wide variety of power converters based on high-frequency power electronic devices and complex switching technologies. This has resulted in a noticeable degradation in the power quality (PQ) of power systems. To solve the aforementioned problem, advanced active power filters (APFs) with improved system performance and properly designed switching devices and control algorithms can provide a promising solution because an APF can compensate for voltage sag, harmonic currents, current imbalance, and active and reactive powers individually or simultaneously. This paper demonstrates, for the first time, the detailed design procedure and performance of a digitally controlled 2 kVA three-phase shunt APF system using gallium nitride (GaN) high electron mobility transistors (HEMTs). The designed digital control scheme consists of three type II controllers with a digital signal processor (DSP) as the control core. Using the proposed APF and control algorithms, fast and accurate compensation for harmonics, imbalance, and reactive power is achieved in both simulation and hardware tests, demonstrating the feasibility and effectiveness of the proposed system. Moreover, GaN HEMTs allow the system to achieve up to 97.2% efficiency.