The stresses in substrate-bonded Cu thin films and Ag/Ni multilayers were studied using wafer curvature and x-ray scattering techniques. The biaxial modulus of sputtered Cu films in the as-deposited state is less than that of the dynamic by approximately 15%. After annealing, the modulus increases due to enhanced 〈111〉 texture but still remains comparatively low. The deficit increases at higher temperatures, suggesting anelastic processes contribute to the modulus reduction. The annealed Cu films show high flow strengths due to the presence of the rigid substrate. Attempts were made to find a dislocation boundary layer in the plastically strained film by grazing incidence diffraction studies. No confirmation of a strain gradient near the substrate could be found, however, due to the insensitivity of the measurement to strains at buried interfaces. Significant strain relaxation was seen at the surface, however. The effect of interphase boundaries on internal stresses was also studied in Ag/Ni multilayers. The {lcub}111{rcub} interface stress was found to be −2.17 ± 0.15 N m−1, in agreement with previous studies. High and low-angle x-ray scattering experiments show that this value is unaffected by intermixing. The widths of Ag/Ni and Ni/Ag interfaces were determined and correlated to an excess volume that derives from the volume expansion of misfit dislocations. A positive excess volume is consistent with a negative interface stress when accounting for anharmonic terms in the interatomic potential.
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机译:使用晶片曲率和X射线散射技术研究了与基板结合的Cu薄膜和Ag / Ni多层膜中的应力。处于沉积状态的溅射铜膜的双轴模量比动态模量小约15%。退火后,模量由于增强的“ 111”织构而增加,但仍保持较低水平。赤字在较高的温度下增加,表明无弹性过程有助于模量降低。由于存在刚性基底,退火的Cu膜显示出高的流动强度。尝试通过掠射入射衍射研究在塑性应变膜中找到位错边界层。然而,由于测量对掩埋界面处的应变不敏感,因此未找到在基板附近的应变梯度的确认。然而,在表面处观察到明显的应变松弛。在Ag / Ni多层膜中也研究了相间边界对内应力的影响。与先前的研究一致,发现{lcub} 111 {rcub}界面应力为−2.17±0.15 N m -1 super>。高和低角度X射线散射实验表明,该值不受混合影响。确定了Ag / Ni和Ni / Ag界面的宽度,并将其与由错配位错的体积膨胀产生的过量体积相关。当考虑原子间电势中的非谐项时,正的过剩体积与负的界面应力是一致的。
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