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Stress tests of analog CMOS ICs for gate-oxide reliability enhancement.

机译:模拟CMOS IC的压力测试,可增强栅极氧化物的可靠性。

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摘要

Yield and reliability are two factors affecting the profitability of semiconductor manufacturing. In the manufacturing process of modern VLSI semiconductor devices, gate-oxide defects have been found as one of the major causes for the reliability problems of CMOS integrated circuits (ICs). Stress testing is a technique used to weed-out early life failures by applying higher than usual levels of stress to speed up the deterioration of electronic devices. The industry standard methods for stress testing have been high-temperature burn-in and high-voltage stress. Burn-in decreases failure rate of a product during the early field life, but overall cost and turn around time are of concerns. The added manufacturing cost may range from 5% to 40% of the total product cost, depending on the burn-in time, qualities of ICs, and product complexity. Extreme-voltage stress test aims at enhancing both quality and reliability without performing the high-cost burn-in test process. Extreme-voltage screening has been successfully implemented to enhance gate-oxide reliability of digital CMOS ICs. However, the success has not yet been extended to its analog counterparts. Today, almost all IC manufacturers employ the digital circuits extreme-voltage screening process for the analog modules in mixed-signal CMOS ICs. This study initiates the research on extreme-voltage stress of analog CMOS ICs with the goal to improve their quality and reliability cost effectively.; This study presents an efficient yet effective extreme-voltage stress test process for analog CMOS circuits analytically. It develops the framework of an automatic stress test system for analog circuits, that integrates three major components—Stress Vector Generator, Stressability Analyzer , and Stressability Design Methodology.; Stress vector generator and stressability analyzer are analysis tools used by the stress test process to determine the stressability of a given circuit. Stress vector generator can provide optimal set of stress vectors and stressability analyzer determines the stressability of the circuit based on the selected stress vectors. Stressability design methodology of the stress test process is employed during design phase to ensure desired stressability of the circuit. This design methodology utilizes the two analysis tools and stressability enhancement process to meet stressability requirements during the design phase.; This work defines the fundamental concepts required for proper stressability of analog circuits. Based on these concepts it develops stress vector generation procedure for extreme-voltage stress test and burn-in of analog CMOS ICs. It also presents stressability analysis process that can locate portions of a circuit having poor stressability. It then describes an effective stressability enhancement process to improve the stressability of problem areas identified by the stressability analysis. The development is readily applicable to digital and mixed signal CMOS ICs. For large circuits, it presents a circuit decomposition model so that the developed processes can be applied in a hierarchical manner. This study also analyzes the stressability of various gate-oxide reliability enhancement techniques currently employed in the industry. It compares the existing methods and identifies the trade-offs that will determine the selection of proper stress test.
机译:成品率和可靠性是影响半导体制造盈利能力的两个因素。在现代VLSI半导体器件的制造过程中,已发现栅氧化物缺陷是CMOS集成电路(IC)可靠性问题的主要原因之一。压力测试是一种消除早期寿命失败的技术,通过施加比平常更高的压力来加速电子设备的老化。压力测试的行业标准方法是高温老化和高压应力。老化会降低产品在早期现场寿命中的故障率,但是总成本和周转时间是值得关注的问题。增加的制造成本可能占总产品成本的5%至40%,具体取决于预烧时间,IC的质量和产品复杂性。极限电压应力测试旨在提高质量和可靠性,而无需执行昂贵的老化测试过程。极限电压筛选已成功实施,以增强数字CMOS IC的栅极氧化物可靠性。但是,该成功尚未扩展到其模拟同类产品。如今,几乎所有的IC制造商都在混合信号CMOS IC中为模拟模块采用数字电路极压筛选工艺。这项研究启动了对模拟CMOS IC的极端电压应力的研究,目的是有效地提高其质量和可靠性成本。这项研究通过分析提出了一种有效而有效的用于模拟CMOS电路的极端电压应力测试过程。它开发了一个用于模拟电路的自动压力测试系统的框架,该系统集成了三个主要组件:应力矢量生成器,应力分析器应力设计方法论。应力矢量发生器和应力分析器是应力测试过程中用来确定给定电路的应力分析工具。应力向量生成器可以提供最佳的应力向量集,应力分析器根据所选的应力向量确定电路的应力。在设计阶段采用压力测试过程的可应力性设计方法,以确保电路具有所需的可应力性。该设计方法论利用了两种分析工具和应力增强过程来满足设计阶段的应力需求。这项工作定义了适当的模拟电路可承受性所需的基本概念。基于这些概念,它开发了用于极端电压应力测试和模拟CMOS IC老化的应力矢量生成程序。它还提出了可应力性分析过程,该过程可以定位电路中应力性较差的部分。然后,它描述了一种有效的应力增强过程,以改善通过应力分析确定的问题区域的应力。该开发很容易适用于数字和混合信号CMOS IC。对于大型电路,它提供了一个电路分解模型,以便可以分层方式应用开发的过程。这项研究还分析了当前行业中使用的各种栅极氧化物可靠性增强技术的压力。它比较了现有方法并确定了折衷方案,这些折衷方案将决定选择适当的压力测试。

著录项

  • 作者

    Khalil, Mohammad Athar.;

  • 作者单位

    Michigan State University.;

  • 授予单位 Michigan State University.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2001
  • 页码 137 p.
  • 总页数 137
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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