Fabrication and modeling of thin-film anodic titania memristors.

摘要

A new method for the fabrication of memristors is exhibited involving the electrochemical anodization of titanium. This is an inexpensive, room temperature alternative to the current methods of fabrication. Two sets of devices were fabricated with varying anodization times and the devices were characterized. One set of the devices was annealed before characterization to evaluate the importance of annealing as stated in papers. The devices not annealed yielded memristive behavior due to oxygen vacancies created at the titanium-TiO2 junction buried below the surface of the device. The annealed devices behaved as resistors because the surface of the TiO 2 exposed to the annealing created oxygen vacancies at this interface ensuring both junctions were ohmic. Using an existing model, the best device was modeled by adapting the relevant process parameters.