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Yield estimation based on layout and process data.

机译:基于布局和过程数据的产量估算。

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摘要

The project deals with the estimation of Integrated Circuit (IC) yield based on layout and process characterization data. It emphasizes the need to design for manufacturability, and the importance of assessing the quality of the design, to improve the manufacturability of the IC, and thereby reduction of cost. The report outlines innovative and robust CAD techniques developed to predict the yield of any given integrated circuit at the schematic stage, as well as the layout stage using Cadence EDA (Electronics Design Automation) tools. The interconnect yield model, which is a critical area-based yield model is applied for estimating the yield of any given integrated circuit. The different yield loss mechanisms are analyzed, with concentration on the functional yield loss due to spot defects, including shorts and opens. The vital concept of critical area is applied for yield estimation, and an improvised CAD technique (Cadence Dracula(TM)) is established to extract the critical area for shorts in metal lines of the same conducting layer as well as different layers due to the defects in the oxide separating the layers, and also opens in any given IC layout. A C++ code is written to extract the parameters from the schematic of any IC design and calculate the interconnect yield. A user-friendly Applet viewer is designed using JAVA to estimate the yield for any given integrated circuit at the layout stage, using the layout in the GDSII format as input. The results of critical area extraction and yield estimation for an ideal test circuit designed using Cadence are presented. The project concludes with a description about different yield enhancement techniques to improve the manufacturability of the IC.
机译:该项目根据布局和工艺特征数据处理集成电路(IC)产量的估算。它强调了对可制造性进行设计的必要性,以及评估设计质量,改善IC的可制造性并由此降低成本的重要性。该报告概述了创新和强大的CAD技术,这些技术用于在原理图阶段以及使用Cadence EDA(电子设计自动化)工具进行布局阶段预测任何给定集成电路的成品率。互连良率模型是基于面积的关键良率模型,可用于估算任何给定集成电路的良率。分析了不同的产量损失机制,重点研究了由于缺陷(包括短路和断路)引起的功能产量损失。关键区域的关键概念用于产量估算,并且建立了一种简易的CAD技术(Cadence Dracula(TM))以提取由于缺陷而导致同一导电层以及不同层的金属线短路的关键区域在氧化物中将各层分开,并且在任何给定的IC布局中也都打开。编写C ++代码以从任何IC设计的原理图中提取参数并计算互连良率。使用JAVA设计了一种用户友好的Applet查看器,以GDSII格式的布局作为输入,可以在布局阶段估算任何给定集成电路的产量。给出了使用Cadence设计的理想测试电路的临界面积提取和成品率估计结果。该项目以对提高IC的可制造性的不同良率提高技术的描述作为结束。

著录项

  • 作者

    Subramanian, Karthik.;

  • 作者单位

    The University of Texas at Arlington.;

  • 授予单位 The University of Texas at Arlington.;
  • 学科 Engineering Electronics and Electrical.; Engineering Industrial.
  • 学位 M.S.E.E.
  • 年度 2003
  • 页码 148 p.
  • 总页数 148
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;一般工业技术;
  • 关键词

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